Improved speed and accuracy for optical reflectance profiling of SIMOX wafers

E. A. Johnson, A. Dudkin
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Abstract

An ongoing program to develop manufacturing technology which will improve the availability and reduce the cost of SIMOX wafers is reported. A major thrust of this program is the identification of characterization and measurement techniques for in-process monitoring of SIMOX wafers. An improved method is developed for using optical reflectance to measure oxygen concentration versus depth in as-implanted and as-annealed SIMOX wafers. This method improves the speed of the fitting calculation by more than a factor of 2000 while improving the accuracy by more than an order of magnitude.<>
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提高了SIMOX晶圆的光学反射轮廓的速度和准确性
据报道,一项正在进行的计划是开发制造技术,以提高SIMOX晶圆的可用性并降低成本。该计划的一个主要推力是确定SIMOX晶圆的过程监控的表征和测量技术。提出了一种改进的方法,利用光学反射率来测量氧浓度随深度的变化。该方法将拟合计算的速度提高了2000倍以上,同时将精度提高了一个数量级以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs Low-field charge injection in SIMOX buried oxides The effect of high field stress on the capacitance/voltage characteristics of buried insulators formed by oxygen implantation Polysilicon thin film transistors with field-plate-induced drain junction for both high-voltage and low-voltage applications Persistent photoconductivity in SIMOX films
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