C. Cruz González, B. Sahelices, J. Jiménez, O. G. Ossorio, H. Castán, M. González, G. Vinuesa, S. Dueñas, F. Campabadal, H. García
{"title":"Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes","authors":"C. Cruz González, B. Sahelices, J. Jiménez, O. G. Ossorio, H. Castán, M. González, G. Vinuesa, S. Dueñas, F. Campabadal, H. García","doi":"10.1109/CDE52135.2021.9455723","DOIUrl":null,"url":null,"abstract":"A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 13th Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE52135.2021.9455723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli.
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