S. De Gendt, J. Chen, R. Carter, E. Cartier, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, J. Maes, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, T. Witters, E. Young, C. Zhao, M. Heyns
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引用次数: 2
Abstract
The authors discuss Hf-Al mixed oxide characteristics, and applications to MOS capacitors and transistors. XRD an TEM analyses are performed and crystallisation behaviour analysed.
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