C. O. Chui, H. Kim, J. Mcvittie, B. Triplett, P. McIntyre, K. Saraswat
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引用次数: 2
Abstract
In this paper the two metal oxide dielectrics (ZrO/sub 2/ and HfO/sub 2/) deposited in the same chamber with the same technique using a newly developed self-aligned gate-last MOSFET process are compared. The compared results suggested that using either ZrO/sub 2/ or HfO/sub 2/ would provide similar on-to-off current ratio at a given device size.
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