{"title":"Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation","authors":"P. R. Rao, Xinyang Wang, A. Theuwissen","doi":"10.1109/ESSDERC.2007.4430955","DOIUrl":null,"url":null,"abstract":"In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in deep-submicron technology is developed to study the sensor's sensitivity towards gamma-ray irradiation. It is found that the spectral degradation due to gamma-rays is mainly through changes in the top-layer material characteristics and Si/SiO2 interface. There is a non-trivial contribution of STI (shallow trench isolations) towards the dark current of the sensor, and it turns out to be highly sensitive to radiation damage.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in deep-submicron technology is developed to study the sensor's sensitivity towards gamma-ray irradiation. It is found that the spectral degradation due to gamma-rays is mainly through changes in the top-layer material characteristics and Si/SiO2 interface. There is a non-trivial contribution of STI (shallow trench isolations) towards the dark current of the sensor, and it turns out to be highly sensitive to radiation damage.
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