A 20-Gb/s optical receiver with integrated photo detector in 40-nm CMOS

Shih-Hao Huang, Wei-Zen Chen
{"title":"A 20-Gb/s optical receiver with integrated photo detector in 40-nm CMOS","authors":"Shih-Hao Huang, Wei-Zen Chen","doi":"10.1109/ASSCC.2013.6691023","DOIUrl":null,"url":null,"abstract":"This paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dBΩ conversion gain when driving 50-Ω output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 × 0.54 mm. This receiver core drains 30 mW from 1-V supply.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

This paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dBΩ conversion gain when driving 50-Ω output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 × 0.54 mm. This receiver core drains 30 mW from 1-V supply.
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20gb /s光接收器,集成40纳米CMOS光检测器
本文介绍了一种20gb /s单片集成CMOS光接收机,该接收机在单片上集成了光电探测器、跨阻放大器和限流放大器。结合二维网格空间调制光探测器,光接收器实现了创纪录的高速度,并能够在驱动50-Ω输出负载时提供80-dBΩ转换增益。在跨阻和后限放大器设计中采用了嵌套反馈拓扑结构,以实现宽带和高增益操作,而无需并联峰值电感。采用通用的40纳米CMOS技术,芯片尺寸为0.6 × 0.54 mm。这个接收器核心从1v电源中消耗30mw。
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