{"title":"Two and three dimensional MOSFETs simulation with density gradient model","authors":"T. Toyabe","doi":"10.1109/IWJT.2004.1306868","DOIUrl":null,"url":null,"abstract":"A 2D and 3D density gradient model is described. Drain current characteristics taking quantum effects into consideration are simulated for extremely scaled bulk nMOSFETs with nanometer channel length and decananoscale tri-gate FinFETs.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306868","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A 2D and 3D density gradient model is described. Drain current characteristics taking quantum effects into consideration are simulated for extremely scaled bulk nMOSFETs with nanometer channel length and decananoscale tri-gate FinFETs.
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