Technology Developments on iLGAD Sensors at IMB-CNM

Abstract

In this contribution, we will present the status of the technological developments at IMB-CNM to fabricate Inverse Low Gain Avalanche Detectors (iLGAD) for pixelated detectors. This iLGAD sensor concept is one of the most promising technologies for enabling the future 4D tracking paradigm that requires both precise position and timing resolution. In the iLGAD concept, based on the LGAD technology, the readout is done at the ohmic contacts, allowing for a continuous unsegmented multiplication junction. This architecture provides a uniform gain over all the active sensor area. This concept was successfully demonstrated in a first generation of 300 μm thick iLGAD sensors. In the second generation, we have fabricated thick iLGAD sensor optimizing the periphery for X-Ray irradiations. Currently, we are developing a third generation based on 50 μm thick pixelated iLGADs optimized for timing detection, with a periphery design able to sustain high electric fields and a simpler single-side manufacturing process.