Semi-additive Cu-polymer RDL process for interposers applications

F. Duval, M. Detalle, X. Sun, E. Beyne, C. Neve, D. Velenis
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引用次数: 1

Abstract

This paper explores the possibility to use insulating spin-on dielectric materials for 2.5D interposers. Up to 7 photosensitive materials have been investigated in terms of minimum line/space and via resolution to determine the maximum wiring density. In addition the electrical performances of the best materials were assessed in DC and RF to extract the dielectric constant and loss tangent. Finally the polymer semi-additive process was compared to a Damascene technology using the Wide I/O 2 as case study. The overall performances of each technology are assessed in terms of electrical performances, cost of ownership and wafer bowing. It was shown that the semiadditive process can compete with a conventional Damascene process. The best performing material is a phenol-based polymer, positive tone, aqueous developable, low temperature cure and with a high resolution (up to AR of 1:3).
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中间体应用的半添加剂铜聚合物RDL工艺
本文探讨了用绝缘自旋介电材料作为2.5D中间体的可能性。多达7种光敏材料在最小线/空间方面进行了研究,并通过分辨率确定了最大布线密度。此外,还对最佳材料在直流和射频下的电学性能进行了评估,以提取介电常数和损耗正切。最后,以Wide I/O 2为例,将聚合物半添加剂工艺与Damascene技术进行了比较。每种技术的整体性能都是根据电气性能、拥有成本和晶圆弯曲来评估的。结果表明,半加性工艺可与传统的大马士革工艺相媲美。性能最好的材料是酚基聚合物,正色调,水显影,低温固化,高分辨率(高达1:3的AR)。
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