S. Gowda, G. Mathur, Qihang Li, S. Surthi, Q. Zhao, J. Lindsey, K. Mobley, D. F. Bocian, V. Misra
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引用次数: 7
Abstract
The properties of silicon in hybrid CMOS/molecular capacitors were successfully engineered to produce multiple bit and long retention-time devices. Charge storage molecules were attached to silicon substrates to produce multiple bit and long retention time characteristics that may be attractive for nanoscale high density memory applications.
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