{"title":"GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions","authors":"O. Trescases, S. Murray, W. L. Jiang, M. S. Zaman","doi":"10.1109/IEDM13553.2020.9371918","DOIUrl":null,"url":null,"abstract":"This paper reviews monolithic GaN integration for power ICs, focusing on current technological capabilities. We highlight key opportunities for integrating low-voltage circuits alongside power devices to support converter operation. Simulations and experimental results from the imec 200 V GaN-on-SOI and ON Semiconductor 650 V GaN-on-Si processes provide quantitative insights for digital and analog circuitry.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
This paper reviews monolithic GaN integration for power ICs, focusing on current technological capabilities. We highlight key opportunities for integrating low-voltage circuits alongside power devices to support converter operation. Simulations and experimental results from the imec 200 V GaN-on-SOI and ON Semiconductor 650 V GaN-on-Si processes provide quantitative insights for digital and analog circuitry.
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