{"title":"The Present State of the Art of Wide-Bandgap Semiconductors and Their Future","authors":"M. Rosker","doi":"10.1109/RFIC.2007.380855","DOIUrl":null,"url":null,"abstract":"This paper summarizes recent improvements in the performance and reliability of microwave and millimeter-wave wide-bandgap gallium nitride on silicon carbide devices and their promise for future integrated circuits. Many recent advances have been made as a result of the on-going Phase II wide band gap semiconductor for RF applications (WBGS-RF) program funded by the Defense Advanced Research Projects Agency (DARPA). During Phase II of the program, significant progress has been made toward realizing wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high power applications.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
This paper summarizes recent improvements in the performance and reliability of microwave and millimeter-wave wide-bandgap gallium nitride on silicon carbide devices and their promise for future integrated circuits. Many recent advances have been made as a result of the on-going Phase II wide band gap semiconductor for RF applications (WBGS-RF) program funded by the Defense Advanced Research Projects Agency (DARPA). During Phase II of the program, significant progress has been made toward realizing wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high power applications.
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