J. Fujikata, M. Noguchi, M. Miura, Masashi Takahashi, Shigeki Takahashi, T. Horikawa, Y. Urino, Takahiro Nakamura, Y. Arakawa
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引用次数: 5
Abstract
We report on a high speed silicon-waveguide-integrated PIN Ge photodetector of 45 GHz bandwidth, and a high efficiency of 0.3 V·cm silicon optical modulator with a metal-oxide-semiconductor (MOS) junction by applying the low optical loss and high conductivity poly-silicon gate. These OE/EO devices enable low drive voltage of around 1V, which would contribute to a high density optical interposer of the future photonics-electronics convergence system.
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