Xinghong Zhang, G. Xia, Yuansen Xu, Yufen Yang, Zhanguo Wang
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引用次数: 0
Abstract
The influence of interface states on the characteristics of AlGaAs/GaAs high electron mobility transistor (HEMT) direct current (DC) output has been quantitatively analyzed in the first time using an analytical model of HEMT DC output. Considering the action of the interface states in a AlGaAs/GaAs heterostructure, we have analyzed in detail the effect of interface states on I-V characteristics and transconductance of HEMT. Our calculated results show that the control capability of the gate voltage on the channel current reduces with increasing density of interface states, the transconductance of device decreases. Hence, the existence of the interface states degrades the performance of HEMT.
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