Novel High-Q Inductor using Active Inductor Structure and Feedback Parallel Resonance Circuit

Sujin Seo, Nam-Sik Ryu, Heungjae Choi, Y. Jeong
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引用次数: 27

Abstract

This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor (HI) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and capacitor. The novelty of the proposed structure is based on the increase of g-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 250 around 5 GHz.
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采用有源电感结构和反馈并联谐振电路的新型高q电感器
本文提出了一种采用传统接地有源电感和反馈并联谐振电路的新型高q电感器。本文提出的高q电感由传统有源接地电感和由低q螺旋电感和电容组成的反馈并联谐振电路组成。该结构的新颖之处在于通过在旋转器结构中加入并联谐振电路来提高g因子。高q电感器采用0.18 μ m Hynix CMOS技术制造。所制电感在5 GHz附近的电感值大于45 nH, q因子大于250。
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