Y. Chou, G. Li, K. Yu, C. Wu, P. Chu, L. Hou, T. Midford
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引用次数: 11
Abstract
PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs processed with different surface conditions and on epitaxial wafers from different vendors were fabricated to study the off-state breakdown walkout. It has been shown that breakdown walkout of passivated high-power PHEMTs depends on the surface process conditions and to a less degree on the starting wafers. The breakdown walkout shows no noticeable recovery after annealing at 240/spl deg/C for 400 hours, indicating a permanent improvement. The results suggest an alternative to optimize the PHEMT's process for reliability and to improve the breakdown voltage.
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