Characterization of thin layers in shallow junction technology by quadrupole SIMS

Abstract

This paper reports on routine SIMS applications in SiGe EPI and on Oxynitride process control including the quality control of the SIMS data itself. As an example an advanced SIMS protocol will be discussed for nm-thin high-k layer metrology. This protocol is based on low energy oxygen beam analysis, which provides improved quantification of the N distribution. We will present a new method, which allows accurate location of the interface position and measurement of the SiON layer thickness under this protocol. SiON production process variations have been investigated and will be reported as well.