Venkata N. K. Malladi, Mike Fraser, J. Staudinger, M. Bokatius, Monte Miller
{"title":"A 2–6 GHz, 45 dBm Peak Power T/R SPDT Switch for 5G mMIMO Applications","authors":"Venkata N. K. Malladi, Mike Fraser, J. Staudinger, M. Bokatius, Monte Miller","doi":"10.1109/BCICTS.2018.8551151","DOIUrl":null,"url":null,"abstract":"This paper presents a T/R switch with 45 dBm peak power handling capability aimed at 5G massive MIMO RF front end applications. The switch achieves high power handling by using multi-gate FETs in a stacked fashion and by compensating parasitic capacitances that cause imbalanced voltage distribution across the stack. The switch operates from 2–6 GHz and achieves 45 dBm peak power handling, 0.75 dB IL, 30 dB of isolation at 3.5 GHz.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"355 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a T/R switch with 45 dBm peak power handling capability aimed at 5G massive MIMO RF front end applications. The switch achieves high power handling by using multi-gate FETs in a stacked fashion and by compensating parasitic capacitances that cause imbalanced voltage distribution across the stack. The switch operates from 2–6 GHz and achieves 45 dBm peak power handling, 0.75 dB IL, 30 dB of isolation at 3.5 GHz.