A 2–6 GHz, 45 dBm Peak Power T/R SPDT Switch for 5G mMIMO Applications

Venkata N. K. Malladi, Mike Fraser, J. Staudinger, M. Bokatius, Monte Miller
{"title":"A 2–6 GHz, 45 dBm Peak Power T/R SPDT Switch for 5G mMIMO Applications","authors":"Venkata N. K. Malladi, Mike Fraser, J. Staudinger, M. Bokatius, Monte Miller","doi":"10.1109/BCICTS.2018.8551151","DOIUrl":null,"url":null,"abstract":"This paper presents a T/R switch with 45 dBm peak power handling capability aimed at 5G massive MIMO RF front end applications. The switch achieves high power handling by using multi-gate FETs in a stacked fashion and by compensating parasitic capacitances that cause imbalanced voltage distribution across the stack. The switch operates from 2–6 GHz and achieves 45 dBm peak power handling, 0.75 dB IL, 30 dB of isolation at 3.5 GHz.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"355 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper presents a T/R switch with 45 dBm peak power handling capability aimed at 5G massive MIMO RF front end applications. The switch achieves high power handling by using multi-gate FETs in a stacked fashion and by compensating parasitic capacitances that cause imbalanced voltage distribution across the stack. The switch operates from 2–6 GHz and achieves 45 dBm peak power handling, 0.75 dB IL, 30 dB of isolation at 3.5 GHz.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
2 - 6ghz, 45dbm峰值功率T/R SPDT开关,用于5G mimo应用
本文针对5G大规模MIMO射频前端应用,提出了一种峰值功率处理能力为45dbm的收发开关。该开关通过以堆叠方式使用多栅极场效应管并通过补偿导致堆叠上电压分布不平衡的寄生电容来实现高功率处理。该开关工作频率为2-6 GHz,峰值功率处理为45 dBm, IL为0.75 dB,隔离为30 dB,频率为3.5 GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA SiGe BiCMOS Current Status and Future Trends in Europe Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS Quantification of Dopant Profiles in SiGe HBT Devices Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1