Test circuits to characterize setup/hold/access times, minimum voltage and maximum frequency of operation for memory compilers

Nitin Dhamija, Gaurav Lalani, M. Nelson, J. Brown, Henning Spruth, P. Sharma
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引用次数: 1

Abstract

This paper will explain the design methodology to accurately measure the setup/hold/access time/Vmin & Fmax of memories on silicon. This architecture scheme implements the high resolution fine-tune delays of a few pico-seconds along with the coarse step sizes of ten's to hundreds of pico-seconds depending on technology, along with BIST for memory Vmin & Fmax characterization. This architecture has been implemented on one of our test-chip and silicon measurements show that measured parameters results are within 10% range of the simulated values. Implemented design scheme also ensures the serial as well as parallel measurement of these parameters of the memory instances in order to save the expensive tester time.
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表征内存编译器的设置/保持/访问时间、最小电压和最大操作频率的测试电路
本文将解释精确测量硅上存储器的设置/保持/访问时间/Vmin和Fmax的设计方法。该架构方案实现了几皮秒的高分辨率微调延迟以及10到数百皮秒的粗步长,这取决于技术,以及用于内存Vmin和Fmax表征的BIST。该架构已在我们的一个测试芯片上实现,硅测量表明,测量参数结果与模拟值的范围在10%以内。实现的设计方案还保证了对内存实例的这些参数的串行和并行测量,以节省昂贵的测试时间。
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