Mixed-mode magnetron and arc deposition of aluminum oxide films

V. Oskirko, I. Goncharenko, V. Semenov, M. Azhgikhin, M.I. Goncharenko, A. Solovyev
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Abstract

The paper is devoted to the study of the processes of mixed-mode deposition of aluminum oxide films in oxygen and argon mixture. Mixed-mode is a new pulsed thin film deposition technology that combines magnetron sputtering and arc evaporation. The transition of the magnetron discharge to the arc occurs when the discharge current reaches the threshold value, and the arc burning time is controlled by pulse length. The paper describes the experimental equipment and the principles of controlling the parameters of a combined pulse discharge. The results of measuring the ion current density on a substrate and the deposition rate of aluminum oxide films in mixed-modes at different powers of magnetron and arc discharges are presented. Stable initiation of an arc discharge in a pulsed mode with a “poisoned” cathode surface occurs at a cathode current density of 0.4–0.6 A/cm2. With the same average discharge power in mixed-mode, a higher average ion current density on a substrate, higher coating deposition rate and more intensity of plasma radiation are provided, compared with medium-frequency magnetron sputtering.
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混合模式磁控管和电弧沉积氧化铝薄膜
本文研究了在氧气和氩气混合物中铝氧化膜的混合模式沉积工艺。混合模式是一种结合磁控溅射和电弧蒸发的新型脉冲薄膜沉积技术。当放电电流达到阈值时,磁控管放电向电弧过渡,电弧燃烧时间由脉冲长度控制。本文介绍了组合脉冲放电的实验装置和控制参数的原理。给出了在不同磁控管和电弧放电功率下,基片上离子电流密度和混合模式下氧化铝膜沉积速率的测量结果。当阴极电流密度为0.4-0.6 a /cm2时,具有“中毒”阴极表面的脉冲模式下电弧放电的稳定起始。在混合模式下,与中频磁控溅射相比,在相同的平均放电功率下,基片上的平均离子电流密度更高,镀层沉积速度更快,等离子体辐射强度更高。
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