Terahertz emitting devices based on dopant transitions in silicon

Abstract

This study proposes a different approach of much simpler THz emitters based on radiative impurity transitions in doped silicon devices fabricated without Ge alloying. This work has gathered the electroluminescence at 4.2 K from a boron doped sample. The current versus voltage characteristics are measured at the same pulse conditions using an inductive probe and oscilloscope.