Reliability investigation of ultrathin oxides grown by high pressure oxidation and nitrided in N/sub 2/O for ULSI device applications

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1997-07-21 DOI:10.1109/IPFA.1997.638064

T. Roh, D. Lee, Jongdae Kim, K. Baek, J. Koo, D. Lee, K. Nam

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Abstract

The reliability of new ultrathin oxides grown by high pressure oxidation (HIPOX) has been evaluated in order to use gate insulators for ULSI MOSFETs. From the results of the TDDB characteristics of 75 /spl Aring/ thick HIPOX oxide nitrided at 1100/spl deg/C for 30 sec, the lifetime of the nitrided-HIPOX oxide at negative constant current stress, -1.0/spl times/10/sup -6/ A/cm/sup 2/ is about 1.2/spl times/10/sup 9/ sec. Initially, the midgap interface trap density (D/sub itm/) of 75 /spl Aring/ thick nitrided-HIPOX oxide is about 2.0/spl times/10/sup 10/ cm/sup -2//spl middot/eV/sup -1/ which is comparable to that of control oxide grown by conventional thermal oxidation. The /spl Delta/D/sub itm/ of the nitrided-HIPOX oxide subjected to the stressing time of 1/spl times/10/sup 4/ sec under -0.1 A/cm/sup 2/ is 1.1/spl times/10/sup 11/ cm/sup -2//spl middot/eV/sup -1/ which is lower than that (1.5/spl times/10/sup 11/ cm/sup -2//spl middot/eV/sup -1/) of the control oxide under the same stressing condition.

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超薄氧化物在N/sub /O中高压氧化和氮化的可靠性研究

为了在ULSI mosfet中使用栅极绝缘子，对高压氧化(HIPOX)生长的新型超薄氧化物的可靠性进行了评估。从75 /spl /厚的HIPOX氧化物在1100/spl℃下氮化30秒的TDDB特性分析结果来看，在负恒流应力-1.0/spl次/10/sup -6/ A/cm/sup 2/下，氮化HIPOX氧化物的寿命约为1.2/spl次/10/sup 9/ sec。75 /spl Aring/厚氮化hipox氧化物的中隙界面阱密度(D/sub - itm/)约为2.0/spl倍/10/sup 10/ cm/sup -2//spl middot/eV/sup -1/，与常规热氧化法生长的对照氧化物相当。在-0.1 A/cm/sup 2/下应力时间为1/spl倍/10/sup 4/ s的氮化hipox氧化物的/spl Delta/D/ subitm /为1.1/spl倍/10/sup 11/ cm/sup -2//spl middot/eV/sup -1/，低于相同应力条件下对照氧化物的1.5/spl倍/10/sup 11/ cm/sup -2//spl middot/eV/sup -1/。

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Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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