{"title":"MOSFET modeling into the ballistic regime","authors":"J. Bude","doi":"10.1109/SISPAD.2000.871197","DOIUrl":null,"url":null,"abstract":"Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated I/sub ON/, g/sub m/ and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"124","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 124
Abstract
Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated I/sub ON/, g/sub m/ and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed.
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