The Synthesis of Large-size Silicon Carbide Powder for Crystal Growth

Fang Jiao, Dianpeng Cui, M. Yang, Z. Wu, B. Dong
{"title":"The Synthesis of Large-size Silicon Carbide Powder for Crystal Growth","authors":"Fang Jiao, Dianpeng Cui, M. Yang, Z. Wu, B. Dong","doi":"10.1109/SSLChinaIFWS49075.2019.9019761","DOIUrl":null,"url":null,"abstract":"A study on the synthesis of SiC powder with large size was presented. Special attentions were paid to synthetic temperature and ratio of large and small size silicon powder. Several experiments were designed to understand the effects of these conditions on phase composition, grain size and yield of SiC powder material by using a NAURA Advanced Physical Vapor Transport (PVT) System. It was found that high-quality SiC powder could be acquired at 1950°C for 10h. The rising proportion of large size silicon powder with 500~800μm was beneficial to synthesize large size SiC powder of >750μm. The results showed successful preparation of large size SiC powder and a significant reduction of carbon inclusions in SiC ingots by using SiC powder with large size.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"12 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019761","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A study on the synthesis of SiC powder with large size was presented. Special attentions were paid to synthetic temperature and ratio of large and small size silicon powder. Several experiments were designed to understand the effects of these conditions on phase composition, grain size and yield of SiC powder material by using a NAURA Advanced Physical Vapor Transport (PVT) System. It was found that high-quality SiC powder could be acquired at 1950°C for 10h. The rising proportion of large size silicon powder with 500~800μm was beneficial to synthesize large size SiC powder of >750μm. The results showed successful preparation of large size SiC powder and a significant reduction of carbon inclusions in SiC ingots by using SiC powder with large size.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
晶体生长用大尺寸碳化硅粉的合成
研究了大粒径碳化硅粉体的合成方法。特别注意了合成温度和大小硅粉的配比。为了了解这些条件对碳化硅粉末材料相组成、晶粒尺寸和产率的影响,采用北方华研先进物理气相输送(PVT)系统设计了多个实验。结果表明,在1950℃下,经过10h,可制得高质量的SiC粉末。增大500~800μm大尺寸硅粉的掺量有利于合成>750μm的大尺寸碳化硅粉。结果表明:大粒径碳化硅粉制备成功,可显著降低碳化硅锭中的碳夹杂物;
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Study on high power density light-emting diodes light source Smart Lighting with Autonomous Color Tunability Study on Preparation and Application of Nano-copper Powder for Power Semiconductor Device Packaging Effect of Mechanical Stress on the Electrical Characteristics of Different Type IGBT Chips Design and Characteristics of an Etching Field Limiting Ring for 10kV SiC Power Device
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1