A. Levy, S. Lakkapragada, W. Mieher, K. Bhatia, U. Whitney, M. Hankinson
{"title":"Spectroscopic CD technology for gate process control","authors":"A. Levy, S. Lakkapragada, W. Mieher, K. Bhatia, U. Whitney, M. Hankinson","doi":"10.1109/ISSM.2001.962934","DOIUrl":null,"url":null,"abstract":"Spectroscopic CD (SCD) technology provides high precision shape information with excellent correlation to established critical dimension metrology. Poly-gate wafers from over 20 lots produced in a high-volume manufacturing fab were measured and analyzed with KLA-Tencor's SCD and SEM CD tools. APC simulations on the SCD data demonstrate the potential to reduce the CD deviation from the process target. Focus-exposure process window analysis using additional shape information available with SCD shows the potential value of the more complete view for lithographic cluster tool monitoring.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Spectroscopic CD (SCD) technology provides high precision shape information with excellent correlation to established critical dimension metrology. Poly-gate wafers from over 20 lots produced in a high-volume manufacturing fab were measured and analyzed with KLA-Tencor's SCD and SEM CD tools. APC simulations on the SCD data demonstrate the potential to reduce the CD deviation from the process target. Focus-exposure process window analysis using additional shape information available with SCD shows the potential value of the more complete view for lithographic cluster tool monitoring.
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