Insulated gate III-N devices and ICs

Abstract

The MOSHFET design which combines the advantage of the MOS structure, which suppresses the gate leakage current, and an AlGaN/GaN heterointerface that provides high density, high mobility two-dimensional electron gas channel. This article presents a comparative review of the I-V characteristics, cut-off frequencies, RF output powers, power gain, and nonlinear distortions of AlGaN/GaN MOSHFET, and HFET device. The MOSHFETs possess significant advantages for the monolitic IC design. They sustain very high input impedance at elevated temperatures, even above 300 /spl deg/C. The results show that the MOSHFET based ICs are extremely promising for a large variety of high-power high-temperature applications.