Loss Model of High-Frequency Planar Transformer for High-Voltage Resonant DC/DC Converter

Jinshu Lin, Yehui Yang, S. Yin, Xiong Xin, Runze Wang, Minghai Dong, Hui Li
{"title":"Loss Model of High-Frequency Planar Transformer for High-Voltage Resonant DC/DC Converter","authors":"Jinshu Lin, Yehui Yang, S. Yin, Xiong Xin, Runze Wang, Minghai Dong, Hui Li","doi":"10.1109/WiPDAAsia49671.2020.9360297","DOIUrl":null,"url":null,"abstract":"The increasing demands towards the power density and miniaturization on the power converters make the transformer become the bottleneck. For the traditional transformer, the copper wire is fixed on magnetic core by using the plastic bobbin, which may lead to a bulky size. The planar transformer adopts the multi-layer printed circuit board (PCB) as the winding structure and also uses the planar core, thus to remarkably reduce the size, especially the height. For the DC/DC converter with a high step-up ratio, the transformer with a high turn ratio and the Cockcroft-Walton voltage multiplier are normally employed to achieve the high voltage gain. Since this converter normally works in the zero-voltage-switching (ZVS) mode with relatively low output power, the power dissipation of transformer becomes a key issue. This work demonstrates the loss model of a planar transformer, which is used in the 24-V/1.8-kW resonant DC/DC converter with 20-W peak output power. The loss analysis is compared with the experimental results and a good agreement achieved. It is found that the winding loss is the dominating factor of the total loss.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The increasing demands towards the power density and miniaturization on the power converters make the transformer become the bottleneck. For the traditional transformer, the copper wire is fixed on magnetic core by using the plastic bobbin, which may lead to a bulky size. The planar transformer adopts the multi-layer printed circuit board (PCB) as the winding structure and also uses the planar core, thus to remarkably reduce the size, especially the height. For the DC/DC converter with a high step-up ratio, the transformer with a high turn ratio and the Cockcroft-Walton voltage multiplier are normally employed to achieve the high voltage gain. Since this converter normally works in the zero-voltage-switching (ZVS) mode with relatively low output power, the power dissipation of transformer becomes a key issue. This work demonstrates the loss model of a planar transformer, which is used in the 24-V/1.8-kW resonant DC/DC converter with 20-W peak output power. The loss analysis is compared with the experimental results and a good agreement achieved. It is found that the winding loss is the dominating factor of the total loss.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高压谐振DC/DC变换器高频平面变压器损耗模型
随着对功率变换器功率密度和小型化要求的不断提高,变压器成为其发展的瓶颈。对于传统的变压器来说,铜线是通过塑料线轴固定在磁芯上的,这可能会导致体积庞大。平面变压器采用多层印刷电路板(PCB)作为绕组结构,采用平面铁芯,大大减小了尺寸,尤其是高度。对于高升压比的DC/DC变换器,通常采用高匝比变压器和Cockcroft-Walton电压乘法器来实现高电压增益。由于该变换器通常工作在零电压开关(ZVS)模式下,输出功率相对较低,因此变压器的功耗成为关键问题。本工作演示了用于峰值输出功率为20w的24v /1.8 kw谐振DC/DC变换器的平面变压器的损耗模型。将损耗分析结果与实验结果进行了比较,得到了较好的一致性。结果表明,绕组损耗在总损耗中占主导地位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
General Equation to Determine Design Rules for Mitigating Partial Discharge and Electrical Breakdown in Power Module Layouts The Path Forward for GaN Power Devices A Variable DC-Link Voltage Determination Method for Motor Drives with SiC MOSFETs High Electron Mobility of 1880 cm2 V-S In0.17 Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1