Dalton Martini Colombo, R. Soares, Fabricio Mattos
{"title":"Low voltage low power current reference circuit for passive RFID applications","authors":"Dalton Martini Colombo, R. Soares, Fabricio Mattos","doi":"10.1109/LASCAS.2016.7451021","DOIUrl":null,"url":null,"abstract":"Passive RFID circuits depend on low voltage low power area-efficient current references. This work presents two current source implementations using 180 nm CMOS process. Both circuits work with a minimum supply voltage of 0.8 V and with a current consumption lower than 150 nA. The first one has a positive temperature coefficient while the second one is temperature compensated. Silicon results from 10 measured samples show an average output current of 21.8 nA and 20.1 nA for the PTAT and the temperature-compensated (COMP) references, respectively. Their measured temperature variations were about 41% and 5% in temperature range of -40 to 65 °C, for the PTAT and COMP, respectively.","PeriodicalId":129875,"journal":{"name":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2016.7451021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Passive RFID circuits depend on low voltage low power area-efficient current references. This work presents two current source implementations using 180 nm CMOS process. Both circuits work with a minimum supply voltage of 0.8 V and with a current consumption lower than 150 nA. The first one has a positive temperature coefficient while the second one is temperature compensated. Silicon results from 10 measured samples show an average output current of 21.8 nA and 20.1 nA for the PTAT and the temperature-compensated (COMP) references, respectively. Their measured temperature variations were about 41% and 5% in temperature range of -40 to 65 °C, for the PTAT and COMP, respectively.