Low voltage low power current reference circuit for passive RFID applications

Dalton Martini Colombo, R. Soares, Fabricio Mattos
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引用次数: 4

Abstract

Passive RFID circuits depend on low voltage low power area-efficient current references. This work presents two current source implementations using 180 nm CMOS process. Both circuits work with a minimum supply voltage of 0.8 V and with a current consumption lower than 150 nA. The first one has a positive temperature coefficient while the second one is temperature compensated. Silicon results from 10 measured samples show an average output current of 21.8 nA and 20.1 nA for the PTAT and the temperature-compensated (COMP) references, respectively. Their measured temperature variations were about 41% and 5% in temperature range of -40 to 65 °C, for the PTAT and COMP, respectively.
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无源RFID应用的低电压低功率电流参考电路
无源RFID电路依赖于低电压、低功率、高效率的电流基准。本研究提出了两种使用180nm CMOS工艺的电流源实现。两种电路都在0.8 V的最小供电电压和低于150na的电流消耗下工作。第一个有一个正的温度系数,而第二个是温度补偿。来自10个测量样品的硅结果显示,PTAT和温度补偿(COMP)参考的平均输出电流分别为21.8 nA和20.1 nA。在-40 ~ 65℃的温度范围内,PTAT和COMP的测量温度变化分别约为41%和5%。
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