{"title":"Microwave heating for advanced semiconductor processing","authors":"J. Booske","doi":"10.1109/ISDRS.2003.1272185","DOIUrl":null,"url":null,"abstract":"The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 /spl deg/C/s to 1200 /spl deg/C and SiC at 400 /spl deg/C/s to 2000 /spl deg/C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272185","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 /spl deg/C/s to 1200 /spl deg/C and SiC at 400 /spl deg/C/s to 2000 /spl deg/C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.
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