An improved I-V model of small geometry MOSFETs for SPICE

1989 Proceedings of the IEEE Custom Integrated Circuits Conference Pub Date : 1989-05-15 DOI:10.1109/CICC.1989.56723

S. Chung, T. S. Lin, Yi-Ting Chen

引用次数: 5

Abstract

A description is given of a computationally efficient SPICE model for accurate prediction of the I-V and threshold voltage characteristics of small-geometry MOSFETs. The model based on an enhancement of the SPICE LEVEL3 MOS model and a novel approach of parameter extraction. The expressions achieved for the drain currents hold in the weak inversion, strong inversion, and saturation regimes of operation. The model supports the design of both short-channel and narrow-gate MOSFETs with any kind of implanted channel. Accuracy and benchmark tests show substantial improvements over the original LEVEL3 model

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用于SPICE的小几何mosfet的改进I-V模型

描述了一种计算效率高的SPICE模型，用于精确预测小几何mosfet的I-V和阈值电压特性。该模型基于SPICE LEVEL3 MOS模型的改进和一种新的参数提取方法。所得的漏极电流表达式适用于弱反转、强反转和饱和工况。该模型支持设计具有任何类型植入通道的短通道和窄栅极mosfet。准确性和基准测试表明，与原来的LEVEL3模型相比，有了实质性的改进

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1989 Proceedings of the IEEE Custom Integrated Circuits Conference

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