Single stage RF amplifier at 5.8GHz ISM band with IEEE 802.11a standard

Abstract

This paper describes the circuit design and measurement of a single stage RF amplifier for 5.8 GHz-band with IEEE 802.11a standards for WLAN applications. The circuit was simulated using Ansoft Designer where a 14 dB of gain; input and output return loss less than -10 dB were observed. The GaAs hetrojunction FET (HFET), capacitors and resistors are combined with the microstrip line pattern by silver epoxy. A 1 dB output power compression point (P1dB) of 17 dBm and 14.56d B of gain when -1 dBm power injected under 6 V and frac12 Idss biasing are measured.