Hua-Bin Zhang, M. Cai, Xiao-Yong He, Gui-Hui Chen, Haijun Wu
{"title":"A high self-resonant and quality factor transformer using novel geometry for silicon based RFICs","authors":"Hua-Bin Zhang, M. Cai, Xiao-Yong He, Gui-Hui Chen, Haijun Wu","doi":"10.1109/EDSSC.2013.6628223","DOIUrl":null,"url":null,"abstract":"A novel 24-sided concave-convex geometry monolithic transformer that has high self-resonant frequency and quality factor is presented. It is implemented with the top level thick Cu metal and multiple geometrical structures in 0.13 um CMOS mixed-signal 1P6M salicide back-end process. Compared to those with conventional square, hexagonal and octagonal geometry structure, the novel transformer achieves better quality factor, self-resonant frequency and less chip area. The simulation results show that 1.12, 1 and 0.58 GHz improvements in SRF, and 2.4, 0.9 and 0.3 enhancements in quality factor are obtained respectively when compared to typical square, hexagonal and octagonal transformer with the same inductance of the primary and secondary winding.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A novel 24-sided concave-convex geometry monolithic transformer that has high self-resonant frequency and quality factor is presented. It is implemented with the top level thick Cu metal and multiple geometrical structures in 0.13 um CMOS mixed-signal 1P6M salicide back-end process. Compared to those with conventional square, hexagonal and octagonal geometry structure, the novel transformer achieves better quality factor, self-resonant frequency and less chip area. The simulation results show that 1.12, 1 and 0.58 GHz improvements in SRF, and 2.4, 0.9 and 0.3 enhancements in quality factor are obtained respectively when compared to typical square, hexagonal and octagonal transformer with the same inductance of the primary and secondary winding.
提出了一种具有高自谐振频率和高品质因数的24面凹凸几何单片变压器。它是在0.13 um CMOS混合信号1P6M salicide后端工艺中采用顶级厚铜金属和多种几何结构实现的。与传统的方形、六角形和八角形结构的变压器相比,该变压器具有更好的质量因数、自谐振频率和更小的芯片面积。仿真结果表明,与主、次绕组电感相同的典型方形、六角形和八角形变压器相比,SRF分别提高了1.12、1和0.58 GHz,品质因子分别提高了2.4、0.9和0.3。