Sungchul Lee, Kwang-suk Kim, K. Kim, U. Pi, Y. Jang, U. Chung, I. Yoo, Kinam Kim
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引用次数: 3
Abstract
Novel spin transfer torque MRAM cells with three dimensional freelayer structures were suggested for the high density memory below 20nm technology node. By folding the freelayer to a special geometry, the 3D MTJ Cell structure retains large freelayer volume without an increase of cell foot-print, scaling down the MRAM cells even with in-plane magnetic anisotropy materials. From the micromagnetic calculation with Nudged Elastic Band (NEB) method, we confirmed the thermal stability over 60 in 3D MTJ cell with 15×30 nm2 area.
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