{"title":"Characterisation of silicon oxynitrides and high-k dielectric materials by angle-resolved X-ray photoelectron spectroscopy","authors":"P. Mack, R. White, J. Wolstenholme, A. Wright","doi":"10.1109/ASMC.2003.1194486","DOIUrl":null,"url":null,"abstract":"Angle-resolved X-ray photoelectron spectroscopy (ARXPS) has been used to characterise nondestructively silicon oxynitride and high-k film samples. Film thickness values and concentration profiles were determined in each case. Different chemical states of nitrogen were identified in the silicon oxynitride sample and concentration profiles and dose values for each nitrogen state were calculated. ARXPS was also used to study the difference between hafnium oxide films deposited on thermally grown silicon oxide and on HF-etched silicon. The thickness and chemistry of the interfacial layers were characterised.","PeriodicalId":178755,"journal":{"name":"Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2003.1194486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Angle-resolved X-ray photoelectron spectroscopy (ARXPS) has been used to characterise nondestructively silicon oxynitride and high-k film samples. Film thickness values and concentration profiles were determined in each case. Different chemical states of nitrogen were identified in the silicon oxynitride sample and concentration profiles and dose values for each nitrogen state were calculated. ARXPS was also used to study the difference between hafnium oxide films deposited on thermally grown silicon oxide and on HF-etched silicon. The thickness and chemistry of the interfacial layers were characterised.
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