{"title":"Intense room temperature near infrared emission from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon","authors":"J. Zhang, B. Cheng, J. Gao, J.Z. Yu, Q.M. Wang","doi":"10.1109/GROUP4.2004.1416654","DOIUrl":null,"url":null,"abstract":"Intense near infrared emission was observed from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon. It was found that the addition of Al/sup 3+/ ions could remarkably improve the photoluminescence efficiency of Yb/sup 3+/-implanted SiO/sub 2/ film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Intense near infrared emission was observed from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon. It was found that the addition of Al/sup 3+/ ions could remarkably improve the photoluminescence efficiency of Yb/sup 3+/-implanted SiO/sub 2/ film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.
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