Neutron sensitivity of high voltage SiC devices for avionics applications

C. Weulersse, M. Mazurek, S. Morand, C. Binois, O. Crépel
{"title":"Neutron sensitivity of high voltage SiC devices for avionics applications","authors":"C. Weulersse, M. Mazurek, S. Morand, C. Binois, O. Crépel","doi":"10.1109/RADECS50773.2020.9857698","DOIUrl":null,"url":null,"abstract":"The SEE radiation tolerance of power SiC devices from several manufacturers has been studied. Safe Operating Areas, as well as failure rates at aircraft altitudes, have been characterized through testing at ChipIr facility, in order to validate the common used derating value of 50%.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS50773.2020.9857698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The SEE radiation tolerance of power SiC devices from several manufacturers has been studied. Safe Operating Areas, as well as failure rates at aircraft altitudes, have been characterized through testing at ChipIr facility, in order to validate the common used derating value of 50%.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
航空电子设备用高压SiC器件的中子灵敏度
本文研究了不同厂家功率SiC器件的SEE辐射容限。通过ChipIr设施的测试,安全操作区域以及飞机高度的故障率已被表征,以验证常用的降额值为50%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Mixed Method to Mitigate the TID Effects on 28nm FDSOI Transistors Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray A Novel Propagation Model for Heavy-Ions Induced Single Event Transients on 65nm Flash-based FPGAs On the Use of Redundant Resources in COTS Mixed-Precision GPUs for Efficient DWC Novel FPGA Radiation Benchmarking Structures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1