L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling
{"title":"On the effective mass of holes in inversion layers","authors":"L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling","doi":"10.1109/ULIS.2011.5757950","DOIUrl":null,"url":null,"abstract":"We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ulis 2011 Ultimate Integration on Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2011.5757950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.
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