{"title":"High performance HEMT MMICs for low cost EHF SATCOM terminals","authors":"J. Lester, W. Jones, P. Huang, D. Garske, P. Chow","doi":"10.1109/MCS.1992.186012","DOIUrl":null,"url":null,"abstract":"A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<>
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