Akito Yoshikawa, D. Tadokoro, Y. Yamaguchi, T. Matsuda, M. Kimura, T. Ozawa, Koji Aoki, C. Kuo
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引用次数: 3
Abstract
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
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