Cu-Cu direct bonding by introducing Au intermediate layer

H. Noma, T. Kamibayashi, H. Kuwae, N. Suzuki, T. Nonaka, S. Shoji, J. Mizuno
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Abstract

Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
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引入Au中间层的Cu-Cu直接键合
研究了在直接浸金(DIG)的帮助下,Cu-Cu直接键合在多模扇形圆片级封装中的应用。Cu-Cu直接键合是高频应用的关键技术。为了解决传统方法的挑战,采用了DIG。结果表明,在剪切试验中出现了粘聚破坏。
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