{"title":"A new junction technology for low-resistance contacts and Schottky barrier MOSFETs","authors":"D. Grupp, D. Connelly, C. Faulkner, P. Clifton","doi":"10.1109/IWJT.2005.203895","DOIUrl":null,"url":null,"abstract":"By imposing an ultra-thin insulator between low-workfunction metals and silicon, the Schottky barrier of the junction can be substantially reduced, reducing junction resistance. With this approach, low Schottky barrier metal S/D MOSFETs with Mg and Yb as S/D metals are demonstrated.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
By imposing an ultra-thin insulator between low-workfunction metals and silicon, the Schottky barrier of the junction can be substantially reduced, reducing junction resistance. With this approach, low Schottky barrier metal S/D MOSFETs with Mg and Yb as S/D metals are demonstrated.
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