Compact 200V Diode Constructed on Thick SOI Wafer

Abstract

In the recent decade, the modern Smart Power Applications drive BCD technologies to higher voltage nodes (>100V), lower cost and isolation improvement. Thick SOI technology is one of the options providing sufficient breakdown and desired power. Doping of device wafer is setup low to support necessary spread of depletion region. Typical HV diode is made by implanting a layer of opposite dopant type. Lateral distance between anode and cathode contacts is then defining diode area and become more significant for higher operating voltage. Our work demonstrates a new approach that enable significantly smaller size without additional cost.