{"title":"Design and fabrication of compact etched diffraction grating demultiplexers based on α-Si nanowire technology","authors":"Jun-Hwa Song, N. Zhu","doi":"10.1049/EL:20081038","DOIUrl":null,"url":null,"abstract":"Silicon nanowire waveguides and related etched diffraction grating (EDG) demultiplexers are studied by alpha-Si-on-SiO2 technology. Compact EDG demultiplexers with 10 nm spacing for both echelle and total-internal-reflection (TIR) facets have been fabricated and characterized.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/EL:20081038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
Silicon nanowire waveguides and related etched diffraction grating (EDG) demultiplexers are studied by alpha-Si-on-SiO2 technology. Compact EDG demultiplexers with 10 nm spacing for both echelle and total-internal-reflection (TIR) facets have been fabricated and characterized.
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