K. Hur, R. A. McTaggart, B.W. LeBlanc, W. Hoke, P. Lemonias, A. B. Miller, T. Kazior, L. Aucoin
{"title":"Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages","authors":"K. Hur, R. A. McTaggart, B.W. LeBlanc, W. Hoke, P. Lemonias, A. B. Miller, T. Kazior, L. Aucoin","doi":"10.1109/GAAS.1995.528971","DOIUrl":null,"url":null,"abstract":"A double recessed T-gate process has been successfully utilized to increase gate-to-drain breakdown voltages of double pulse doped AlInAs/GaInAs/InP HEMTs. By varying lateral channel dimensions, breakdown voltages in the range 11-19 V can be tailored with maximum channel currents in the range 450-600 mA/mm. This combination of high breakdown voltages and high channel currents indicate that the double recess process is a promising approach for high power applications.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
A double recessed T-gate process has been successfully utilized to increase gate-to-drain breakdown voltages of double pulse doped AlInAs/GaInAs/InP HEMTs. By varying lateral channel dimensions, breakdown voltages in the range 11-19 V can be tailored with maximum channel currents in the range 450-600 mA/mm. This combination of high breakdown voltages and high channel currents indicate that the double recess process is a promising approach for high power applications.
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