{"title":"A new physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation","authors":"X. Xi, Hongmei Wang, Xing Zhang, Yangyuan Wang","doi":"10.1109/ICSICT.1998.785915","DOIUrl":null,"url":null,"abstract":"A new analytical current model in the strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using a smoothing function. The convergence when employed in circuit simulators is improved. Measurements on devices of varied geometry show good agreement with model predictions.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785915","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new analytical current model in the strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using a smoothing function. The convergence when employed in circuit simulators is improved. Measurements on devices of varied geometry show good agreement with model predictions.
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