{"title":"Optimization of the cutoff frequency for Si/sub 1-x/Ge/sub x/ HBTs","authors":"L. Ai, M. Cheng","doi":"10.1109/ISDRS.2003.1272047","DOIUrl":null,"url":null,"abstract":"In this paper, we derive an analytical expression for the total delay time /spl tau//sub tot/ in Si/sub 1-x/Ge/sub x/HBTs and based on the expression, the influences of the Ge composition profile X/sub Ge/(y) in the base on total delay time /spl tau//sub tot/ is examined for optimization of cutoff frequency f/sub T/. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si/sub 1-x/Ge/sub x/ HBT were studied.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we derive an analytical expression for the total delay time /spl tau//sub tot/ in Si/sub 1-x/Ge/sub x/HBTs and based on the expression, the influences of the Ge composition profile X/sub Ge/(y) in the base on total delay time /spl tau//sub tot/ is examined for optimization of cutoff frequency f/sub T/. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si/sub 1-x/Ge/sub x/ HBT were studied.
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