{"title":"Photoresist stripping using novel sulfuric/ozone process","authors":"H. Tomita, M. Sato, S. Nadahara, T. Saitoh","doi":"10.1109/ISSM.2001.962948","DOIUrl":null,"url":null,"abstract":"Sulfuric acid (H/sub 2/SO/sub 4/) and ozone (O/sub 3/) mixture process (SOM) with in-situ concentration monitor for O/sub 3/ and peroxyso-di-sulfuric acid (H/sub 2/S/sub 2/O/sub 8/) was developed Ultraviolet spectrometers with 190-200 nm and 254 nm of wavelength were used to detect H/sub 2/S/sub 2/O/sub 8/ and O/sub 3/ dissolved in SOM, respectively. In order to mix H/sub 2/SO/sub 4/ and O/sub 3/ effectively, the O/sub 3/ gas ejectors were jointed to a quartz bath directly. Using SOM process with UV oxidant monitors and O/sub 3/ gas ejectors, heavily dosed resist and dry etched resist could be removed perfectly without dry ashing process.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Sulfuric acid (H/sub 2/SO/sub 4/) and ozone (O/sub 3/) mixture process (SOM) with in-situ concentration monitor for O/sub 3/ and peroxyso-di-sulfuric acid (H/sub 2/S/sub 2/O/sub 8/) was developed Ultraviolet spectrometers with 190-200 nm and 254 nm of wavelength were used to detect H/sub 2/S/sub 2/O/sub 8/ and O/sub 3/ dissolved in SOM, respectively. In order to mix H/sub 2/SO/sub 4/ and O/sub 3/ effectively, the O/sub 3/ gas ejectors were jointed to a quartz bath directly. Using SOM process with UV oxidant monitors and O/sub 3/ gas ejectors, heavily dosed resist and dry etched resist could be removed perfectly without dry ashing process.
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