{"title":"Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures","authors":"T. Henderson, P. Ikalainen","doi":"10.1109/GAAS.1995.528982","DOIUrl":null,"url":null,"abstract":"We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at Tj=218/spl deg/C and 245/spl deg/C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at Tj=218/spl deg/C and 245/spl deg/C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.
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