A systems approach to electromigration prevention in bipolar integrated circuits

J. Dunkley, R. Metzler
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引用次数: 1

Abstract

A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit's overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system's electrical and thermal environment are statistically accounted for when determining current density limits in the metallization. This assures that the reliability requirements of the circuit are met.<>
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双极集成电路中防止电迁移的系统方法
提出了一种严格的统计技术,以正确地模拟允许通过集成电路互连金属的最大电流密度的设计规则。电迁移模型包括电路的整体制造和系统环境的考虑。在确定金属化过程中的电流密度限制时,要统计考虑工艺变量、装配变量以及系统电环境和热环境的变化。这样可以确保满足电路的可靠性要求。
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