{"title":"Improved reliability self-aligned C/X-band monolithic power HBT amplifiers fabricated with a low-stress process","authors":"T. Henderson, T.S. Kim","doi":"10.1109/GAAS.1996.567629","DOIUrl":null,"url":null,"abstract":"We report extensive reliability testing and analysis on GaAs single-finger C/X-band HBTs fabricated for monolithic amplifiers with a low-stress process, The HBTs are self-aligned to maximize RF power performance, with ledge passivation and a low stress epitaxial base and dielectric overcoat to improve reliability. Performed from T/sub jo/=185-340/spl deg/C and J/sub co/=25-50 kA/cm/sup 2/. The temperature and current dependence of the various observed failure modes and mechanisms are described. Long-term (>3000 hour), low temperature (<250/spl deg/C), high current stress tests are found to be accurate indicators of how HBTs degrade under nominal operating conditions. Shorter, high temperature tests may lead to excessively optimistic predictions of activation energy and median time to failure.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567629","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
We report extensive reliability testing and analysis on GaAs single-finger C/X-band HBTs fabricated for monolithic amplifiers with a low-stress process, The HBTs are self-aligned to maximize RF power performance, with ledge passivation and a low stress epitaxial base and dielectric overcoat to improve reliability. Performed from T/sub jo/=185-340/spl deg/C and J/sub co/=25-50 kA/cm/sup 2/. The temperature and current dependence of the various observed failure modes and mechanisms are described. Long-term (>3000 hour), low temperature (<250/spl deg/C), high current stress tests are found to be accurate indicators of how HBTs degrade under nominal operating conditions. Shorter, high temperature tests may lead to excessively optimistic predictions of activation energy and median time to failure.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
